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芯片衰減器

重點主要參數

處(chu)理芯(xin)片衰減(jian)(jian)器(qi)(qi),最高(gao)的的250瓦，最高(gao)的的18 GHz，標準化(hua)衰減(jian)(jian)器(qi)(qi)在其它體溫因素下(xia)勻稱等地大幅(fu)度降低RF工(gong)作(zuo)功率，而體溫因素可調(diao)電源單片機芯(xin)片設計為(wei)在室溫下(xia)降低了大約其衰減(jian)(jian)，以具備(bei)4g信號調(diao)平用(yong)需要的合適初(chu)始化(hua)失敗。條狀衰減(jian)(jian)器(qi)(qi)適用(yong)放(fang)縮器(qi)(qi)三(san)極管(guan)，受(shou)到器(qi)(qi)，上/下(xia)更換(huan)器(qi)(qi)，相位適配陣(zhen)列和開關按鈕用(yong)。隨(sui)著需要的規格，就(jiu)可以在攜帶薄或厚阻(zu)值的BeO，氮化(hua)鋁(lv)或氧化(hua)物(wu)鋁(lv)陶瓷(ci)廠家上加工(gong)制(zhi)造(zao)電源單片機芯(xin)片。

品牌：MACOM

物料祥情解紹

集成ic衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040